Just a year after Samsung introduced the first 64GB 3D TSV DDR4 DRAM, they have significantly upped their game. They will soon start the mass production of – for the first time ever – a 128GB TSV DRAM.
“We are pleased that volume production of our high speed, low-power 128GB TSV DRAM module will enable our global IT customers and partners to launch a new generation of enterprise solutions,” said Joo Sun Choi, Samsung Electronics’ executive vice president for Memory Sales and Marketing.
The 128GB TSV module is assembled using TSV(through-silicon via) technology. This allows the company to connect the RAM chips vertically using electrodes passing through holes rather than the more conventional wiring system you find in other RAMs. The module comprises of 36 4GB DRAM packages divided on two sides with each package containing four 20 nanometer 8 GB chips. In total, this makes a total of 114 DDR4 chips . Each package embeds a data buffer function and according to Samsung, this enhances the module performance and the power consumption as well.
What is interesting is that this new hardware almost doubles the performance at 2400 mbps and halves the power usage in comparison to previous generations of DRAM modules. The module however is primarily being produced for enterprise servers and data center applications. It will be interesting to see whether the same technology will be used in consumer products. In that context, Samsung is expected to address consumer products based on the same technology somewhere in the near future.
Original article and image posted on interestingengineering.com on 09 December 2015